The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

14:15 〜 14:30

[F-7-03] Ferroelectric Hf 0.5Zr 0.5O 2 Omega FET and CMOS Inverter with SiGe/Si Super-Lattice channel

○Yi- Ju Yao1, Ting-Yu Tseng2, Ching-Ru Yang2, Tsai-Jung Lin1, Heng-Jia Chang2, Guang-Li Luo3, Fu-Ju Hou3, Yung-Chun Wu2 (1. College of Semiconductor Research, National Tsing Hua University (Taiwan), 2. Department of Engineering and System Science, National Tsing Hua University (Taiwan), 3. Taiwan Semiconductor Research Institute (Taiwan))

https://doi.org/10.7567/SSDM.2023.F-7-03

This study presents a SiGe/Si superlattice ferroelectric omega field-effect transistor. The ferroelectric properties of TiN/Fe-HZO/SL MIS capacitor were confirmed using GIXRD, corresponding C-V and P-V behaviors with different temperature. The use of Fe-HZO improved the device performance with SSmin,n = 62.4 mV/dec, SSmin,p = 78.6 mV/dec, DIBLn = 26.4 mV/V, DIBLp = 37.6 mV/V and high ION/IOFF > 1.0×107, compared to using HfO2 as gate insulator. The VTC and voltage gain of 111.4 V/V.