The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

14:30 〜 14:45

[F-7-04] Monolithic heterogeneous Integration Inverter Consisting of Si (100) PMOSFET and Normally-off Al 2O 3/GaN NMOSFET

○Yutong Fan1,2, Weihang Zhang1,2, Xi Liu1, Yu Wen1, Zhihong Liu1,2, Shenglei Zhao1, Jincheng Zhang1,2, Yue Hao1,2 (1. Lab. of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Univ. of Xidian (China), 2. Guangzhou wide bandgap semiconductor innovation center, inst. of Guangzhou technology, Univ. of Xidian (China))

https://doi.org/10.7567/SSDM.2023.F-7-04

In this work, a novel monolithic heterogeneous integrated inverter consisting of Si (100) PMOSFET and normally-off Al2O3/GaN NMOSFET was investigated. The Si (100) PMOSFET and normally-off Al2O3/GaN NMOSFET were integrated on the same wafer through the transfer printing technology. A peak voltage gain (gV,peak) of ∼27 V/V was obtained in the fabricated inverter due to the decent characteristics of Si(100) PMOSFET and Al2O3/GaN NMOSFET. This heterogeneous integration design highlights the low cost and high transfer efficiency of the transfer printing technology for commercialization and the high performance of Si (100) PMOSFETs overcoming the immaturity of GaN PMOSFETs.