Nanosheet (NS) field-effect transistors (NSFETs) with trimmed NS channels were investigated using technology computer-aided design simulation. Applying laser spike annealing (LSA) to NSFETs degrades their electrical behaviors significantly since diffusion-less source/drain dopant activation increases the channel resistance under the inner spacer. In addition, a narrow NS channel thickness (TNS) is a bottleneck to dissipate heat generated by self-heating effects due to its lower thermal conductivity. In this study, we propose NSFETs with trimmed NS channels that can simultaneously improve electro-thermal behaviors by widening only both edges of NS channels while maintaining a narrow TNS under the gate region