The Japan Society of Applied Physics

14:30 〜 14:45

[G-1-02] Impact of Ru Deposition Method and Adhesion Layer on Electrical Performance of Semi-damascene Interconnects

Gilles Delie1, Elisabeth Camerotto2, Giulio Marti1, Ankit Pokhrel1, Gayle Murdoch1, Anshul Gupta1, Stefan Decoster1, Souvik Kundu1, Seongho Park1, Zsolt Tokei1 (1. imec (Belgium), 2. Lam Research Belgium (Belgium))

https://doi.org/10.7567/SSDM.2023.G-1-02

The impact of Ru deposition method and adhesion layer on the electrical performance of Semi-damascene interconnect lines is evaluated on 300 mm wafers. Metal Pitch (MP) structures varying from 26 to 18 nm patterned using EUV-SADP technique and direct Ru etch were analyzed. The evaluation of PVD and CVD Ru with TiN and TiOx adhesion layers showed significant differences in the electrical performance and morphology of the Ru lines. XRD analysis indicated that the film crystallinity is of prime importance for device yield. The TiN/PVD Ru stack emerges as the optimal stack with a 95% reproducibility.