The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

5:15 PM - 5:30 PM

[G-2-05] Propagation Characteristics of AlScN SAW Resonators on Silicon and Al 2O 3 Substrates

○Guofang Yu1, Renrong Liang1, Congyi Zhu2, Haiming Zhao1, Jing Wang1, Jun Fu1 (1. Tsinghua Univ. (China), 2. Nanjing Univ. of Aero. and Astr. (China))

https://doi.org/10.7567/SSDM.2023.G-2-05

This work presents the utilization of c-AlScN/Si(111), c-AlScN/c-Al2O3, and a-AlScN/r-Al2O3 substrates for one-port SAW resonators. The resonant frequency is around 2.1 GHz with a wavelength of 2 µm. The measurement results demonstrate that the c-AlScN/c-Al2O3 based resonator exhibits a 62% enhancement in the effective electromechanical coupling (Kt2) in comparison to the device based on c-AlScN/Si(111). Moreover, the Kt2 of an a-AlScN/r-Al2O3 device shows further 4% increase over that of the c-AlScN/c-Al2O3 device. These results illustrate the potential of employing AlScN on various substrates to achieve the required performance for meeting future RF device demands.