The Japan Society of Applied Physics

10:45 〜 11:00

[G-4-01 (Late News)] Moisture Barrier Properties of Microwave Plasma-Enhanced CVD Graphene Using Greenhouse Gases for Cu Metallization

Ploybussara Gomasang1,4, Masayoshi Umeno2, Kazuyoshi Ueno3,4 (1. Dept. of Electrical Eng., Silpakorn Univ. (Thailand), 2. C’s Techno Inc. (Japan), 3. Dept. of Electronic Eng., Shibaura Inst. of Tech. (Japan), 4. Int'l Res. Center for Green Electronics, SIT (Japan))

https://doi.org/10.7567/SSDM.2023.G-4-01

Moisture barrier properties of graphene films deposited by microwave plasma-enhanced chemical vapor deposition (PECVD) using greenhouse gases such as CH4 and CO2 as the carbon precursor were investigated for graphene-capped Cu application. It was found that the graphene film using mixed gasses of CH4 and CO2 can suppress the oxidation of Cu during high temperature and high humidity storage. It can be expected to improve the long-term reliability of Cu metallization while reducing greenhouse gases.