In order to fabricate p-type SiC thin films using vinylsilane precursor, we have investigated the effect of tri-methyl-aluminum (TMA) as an Al dopant source mixed with vinylsilane on an SiC thin film. SiC was grown on Si (100) substrate by chemical vapor deposition method with simultaneous supply of vinylsilane and TMA. Al was introduced into the SiC thin films by introduction of TMA, resulting in a decrease in resistivity. Large amounts of TMA introduction were found to cause crystallization of Al₄C₃. Therefore, it was found that TMA can act as a dopant source for Al when controlled in small amounts.