Ti or V-based MAX alloy thin films (MAX compounds are described by the general formula M_n+1AX_n, where M is an early transition metal, A is an element from groups 13 to 16, X is carbon and/or nitrogen and n = 1, 2 or 3.), was reactive sputtered with Ar to evaluate as a wiring material instead of Cu. We investigated in detail the effects of target composition by changing M element and A element on carbon disk and also investigated the effects of film formation conditions on film orientation, surface morphology, and sheet resistance. The resistivity of TiSiC film at 800℃ was 22 Ω which was the lowest in this research. The resistivity of all films decreased over 40% by rasing substrate temperature from R.T. to 400°C or from 400°C to 800℃.