The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

11:45 AM - 12:00 PM

[G-4-05] Photoelectrical Characterization of Heavily-doped p-SiC Schottky Contacts

○Hiroki Imabayashi1, Hitose Sawazaki1, Haruto Yoshimura1, Masashi Kato2, Kenji Shiojima1 (1. Univ. of Fukui (Japan), 2. Nagoya Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2023.G-4-05

We report the experimental results on photoelectrical characterization of heavily-Al-doped p-SiC layers with three different carrier concentrations of 1.0, 1.9, and 7.7×1018 cm-3 by forming Schottky contacts. Despite of the leaky current-voltage (I-V) characteristics, the carrier concentrations and the Schottky barrier heights were obtained by the (C-V) and photoresponse (PR) measurements. In the scanning internal photoemission microscopy (SIPM) measurements, the large signal spots with an average density of approximately 104 cm-3 were observed although no corresponding contrast was seen in the microscope images .