Damascene Compatible Low Thermal Budget Fine-Pitch Copper Hybrid Boding with Ultra-Thin Surface Passivation

Hemanth Kuamr Cheemalamarri

doi:https://doi.org/10.7567/SSDM.2023.G-5-03

09:45 〜 10:00

[G-5-03] Damascene Compatible Low Thermal Budget Fine-Pitch Copper Hybrid Boding with Ultra-Thin Surface Passivation

^○Hemanth Kuamr Cheemalamarri¹, Gim Guan Chen¹, Hongyu Li¹, Chandra Rao Bhesetti¹, Nagendra Sekhar Vasarla¹, Nandini Venkataraman¹, King Jien Chui¹, Srinivasa Rao Vempati¹, Navab Singh¹ (1. Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore (Singapore))

https://doi.org/10.7567/SSDM.2023.G-5-03

Copper/dielectric hybrid bonding is a key enabling technology in advanced chip-level (C2C, C2W) or wafer-level (W2W) heterogeneous integration. While low thermal budget hybrid bonding is desired, the formation of copper oxide and Cu dishing is a major bottleneck and necessitates high annealing temperatures. Although significant research related to the surface passivation of copper has been carried out, damascene compatibility of such processes remains challenging. In this work, we propose a method for passivating the Cu surface at fine-pitch (~6 µm) using a damascene-compatible ultrathin metal passivation layer.

2023 International Conference on Solid State Devices and Materials

[G-5-03] Damascene Compatible Low Thermal Budget Fine-Pitch Copper Hybrid Boding with Ultra-Thin Surface Passivation