The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

10:00 AM - 10:15 AM

[G-5-04] Middle-End of Line Si FinFETs Using Laser-Liquid-Phase-Epitaxy Technique for Monolithic 3DIC

○Bo- Jheng Shih1,2, Yu-Ming Pan1, Hao-Tung Chung1, Nei-Chih Lin2, Chih-Chao Yang2, Po-Tsang Huang1, Huang-Chung Cheng1, Chang-Hong Shen2, Jia-Min Shieh2, Wen-Fa Wu2, Kuan-Neng Chen1, Chenming Hu1,3 (1. Univ. of Yang Ming Chiao Tung (Taiwan), 2. Inst. of Taiwan Semiconductor Research (Taiwan), 3. Univ. of California, Berkeley (United States of America))

https://doi.org/10.7567/SSDM.2023.G-5-04

A low thermal budget Laser-Liquid-Phase-Epitaxy (LLPE) technique is proposed to fabricate single-crystal islands (SCI) for middle-end of line (MEOL) FinFETs. The samples using this technique can demonstrate uniform crystal orientations, with every island being (100) oriented. By utilizing this technique, these single-crystal islands, can be employed as channel materials in the MEOL circuit of monolithic 3DICs. This approach effectively addresses the issue of performance disparity associated with poly-Si channel materials in the upper layer.