The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

11:45 AM - 12:00 PM

[G-6-03] Effect of Passivation Layer on Wafer Warpage

○Wei Feng1, Haruo Shimamoto1, Katsuya Kikuchi1 (1. National Inst. of Advanced Indus. Sci. and Tech. (AIST) (Japan))

https://doi.org/10.7567/SSDM.2023.G-6-03

The material properties of the passivation layer vary largely depending on the fabrication conditions. We investigated the effect of the tetraethoxysilane (TEOS) layer on the wafer warpage with different equipment and sources in experiments and with various material properties set in simulation. We reveal that the source of TEOS and O2 results in a large wafer warpage of 3.5 times that with the source of TEOS and N2O. The warpage control is demonstrated by varying the TEOS thickness. Furthermore, the effect of CTE and Young’s modulus of TEOS on the warpage is analyzed with finite element method (FEM) simulation. This study provides useful information on the material properties and the thickness of the passivation layer for the wafer warpage control.