Optical Amplification in SiN Half-Etch Horizontal Slot Waveguides Incorporating Al2O3:Er Layer

Eva Kempf

doi:https://doi.org/10.7567/SSDM.2023.H-1-01

14:00 〜 14:15

[H-1-01] Optical Amplification in SiN Half-Etch Horizontal Slot Waveguides Incorporating Al2O3:Er Layer

^○Eva Kempf^1,2, Sébastien Cueff², Jimmy John², Arnaud Taute^1,2, Ali Belarouci², Stéphane Monfray¹, Frédéric Boeuf¹, Paul G. Charette³, Régis Orobtchouk² (1. STMicroelectronics (France), 2. Univ. of Lyon (France), 3. Univ. of Sherbrooke (Canada))

https://doi.org/10.7567/SSDM.2023.H-1-01

In this paper, we present SiN half-etch
horizontal slot waveguides incorporating active
Al2O3:Er layer for on-chip optical amplification. We
detail the simulation of slot waveguides, the
optimization of Al2O3 layer deposition and demonstrate
green luminescence as well as a 19 dB signal
enhancement at 1.535 µm along 1 cm-long waveguides.

2023 International Conference on Solid State Devices and Materials

[H-1-01] Optical Amplification in SiN Half-Etch Horizontal Slot Waveguides Incorporating Al2O3:Er Layer