The Japan Society of Applied Physics

2:30 PM - 2:45 PM

[H-1-03] Visualization of THz electromagnetic near field distributions using highly sensitive polarization CMOS image sensor

Ryoma Okada1,2, Maya Mizuno2, Tomoaki Nagaoka2, Hironari Takehara1, Makito Haruta1,3, Hiroyuki Tashiro1,4, Jun Ohta1, Kiyotaka Sasagawa1,2 (1. Nara Institute of Science Technolgy (Japan), 2. National Institute of Information and Communications Technology (Japan), 3. Chitose Institute of Science and Technology (Japan), 4. Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.H-1-03

In this study, we demonstrated THz electromagnetic field imaging based on the measurement of the birefringence index originating from the thermo-optic effect. LiNbO3 (LN) was used as the thermo-optical effect material, and multiwalled carbon nanotube (CNT) thin films were used as the material for THz electromagnetic field to thermal conversion. The birefringence change was measured with high sensitivity using a polarization CMOS image sensor with an on-pixel polarizer. By the proposed method, we visualized the 278 GHz electro-magnetic waves emitted from an impact ionization ava-lanche transit time (IMPATT) diode.