2:30 PM - 2:45 PM
[H-1-03] Visualization of THz electromagnetic near field distributions using highly sensitive polarization CMOS image sensor
In this study, we demonstrated THz electromagnetic field imaging based on the measurement of the birefringence index originating from the thermo-optic effect. LiNbO3 (LN) was used as the thermo-optical effect material, and multiwalled carbon nanotube (CNT) thin films were used as the material for THz electromagnetic field to thermal conversion. The birefringence change was measured with high sensitivity using a polarization CMOS image sensor with an on-pixel polarizer. By the proposed method, we visualized the 278 GHz electro-magnetic waves emitted from an impact ionization ava-lanche transit time (IMPATT) diode.
