The Japan Society of Applied Physics

16:45 〜 17:00

[H-2-03] On-chip non-volatile electron-optical memory switch based on ferroelectric doped graphene

Yong Zhang1, Danyang Yao1, Jianguo Wang2, Zheng-Dong Luo1,3, Ruijuan Tian2, Cizhe Fang1,3, Xuetao Gan2, Yan Liu1,3, Yue Hao1, Genquan Han1,3 (1. School of Microelectronics, Xidian Univ. (China), 2. School of Physical Sci. and Tech., Northwestern Polytechnical Univ. (China), 3. Hangzhou Inst. of Tech., Xidian Univ. (China))

https://doi.org/10.7567/SSDM.2023.H-2-03

We explore a novel route to realize non-volatile electron-optical switches. Non-volatile optical switches denotes that only energy is consumed during the memory states transition and no additional energy to maintain the states. This feature allows further advancement of photonics by providing new ways to achieve photonic reconfigurability with ultra-low energy consumption. In this paper, novel non-volatile electron-optical (EO) switches are fabricated on a silicon nitride platform. With the on-chip optical microring resonator (MRR), a non-volatile ON/OFF switch ratio above 30 dB at a single wavelength and a modulation efficiency of 18.7 dB/V are achieved, and the MRR can be switched between under-coupling, critical coupling, and over-coupling states.