Understanding of Polarization Reversal and Charge Trapping under Imprint in HfO <sub>2</sub>-FeFET by Charge Component Analysis

Yoko Yoshimura

doi:https://doi.org/10.7567/SSDM.2023.H-5-01

9:00 AM - 9:15 AM

[H-5-01] Understanding of Polarization Reversal and Charge Trapping under Imprint in HfO ₂-FeFET by Charge Component Analysis

^○Yoko Yoshimura¹, Kunifumi Suzuki¹, Reika Ichihara¹, Kiwamu Sakuma¹, Kota Takahashi¹, Kazuhiro Matsuo¹, Makoto Fujiwara¹, Masumi Saitoh¹ (1. Kioxia Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.H-5-01

Polarization reversal and charge trapping under imprint in HfO₂-FeFETs are studied by charge component analysis. By decomposing the interfacial trap charge using the transient current measurement in both Metal-Ferroelectric-Metal (MFM) and Metal-Ferroelectric-Insulator-Semiconductor (MFIS) capacitors, we found that V_th under imprint in MFIS is determined by both coercive voltage, V_c shift and the subsequent modulation of charge trapping at the same polarization. The imprint behavior in MFIS can be accurately predicted by that in MFM.

2023 International Conference on Solid State Devices and Materials

[H-5-01] Understanding of Polarization Reversal and Charge Trapping under Imprint in HfO 2-FeFET by Charge Component Analysis

[H-5-01] Understanding of Polarization Reversal and Charge Trapping under Imprint in HfO ₂-FeFET by Charge Component Analysis