The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

09:15 〜 09:30

[H-5-02] Ferroelectric Properties Tuning in Hf 0.5Zr 0.5O 2 Thin Films via Controlling the Crystal Orientations of Single-crystalline TiN Substrates

○Yuyan Fan1,2, Shunda Zhang3, Yulong Dong1,2, Danyang Chen1,2, Jiahui Zhang3,4, Jingquan Liu1, Mengwei Si1, Yanwei Cao3, Xiuyan Li1 (1. National Key Lab. of Sci. and Tech. on Micro/Nano Fabrication (China), 2. Department of Micro/Nano Electronics, Shanghai Jiao Tong Univ. (China), 3. Ningbo Inst. of Materials Tech. and Eng., Chinese Academy of Sci. (China), 4. Faculty of Electrical Eng. and Computer Sci., Ningbo Univ. (China))

https://doi.org/10.7567/SSDM.2023.H-5-02

This work demonstrates the successful tuning of ferroelectric (FE) properties of Hf0.5Zr0.5O2 (HZO) thin films via controlling the crystal orientation of TiN substrates. The HZO films on TiN (111) and TiN (001) substrates exhibit substantially higher polarization than those on TiN (110). In addition, the films on single-crystalline TiN show stronger wake-up than those on polycrystalline TiN. The key to the tuning may be that the crystal orientation-tuned grain sizes affect the phase transition in FE phase formation as well as in switching cycling of polarization.