The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

9:30 AM - 9:45 AM

[H-5-03] Switching Characteristics and Endurance Analysis of Nanolaminated Ferroelectric HZO Gate Stack with Al 2O 3 for Back-End-of-Line Applications

○Cheng-Hung Wu1, Chun-Jung Su2, Vita Pi-Ho Hu1 (1. National Taiwan Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2023.H-5-03

In this work, a nanolaminated ferroelectric (FE) capacitor with a middle-inserting layer (MIL) featuring back-end-of-line (BEOL) compatible conditions (400℃, 30s) are conducted. Broadly-distributed and large coercive voltage (Vc) is observed, which is advantageous to multi-level-cell (MLC) operation and a larger memory window (MW) for FE devices. The MIL gate stack demonstrates recoverable properties on endurance testing for the first time. Additionally, the gradual transition of switching characteristics for MIL devices under the influence of applied electric fields indicates high compatibility and flexibility for neuromorphic training.