The Japan Society of Applied Physics

09:45 〜 10:00

[H-5-04] Laminate-Thickness-Dependent Switching Dynamics of HfO 2-ZrO 2 Ferroelectric Nanolaminate Capacitors

Xiaoyu Ke1,2, Junshuai Chai1,2, Hao Xu1,2, Xiaolei Wang1,2, Wenwu Wang1,2 (1. Key Lab. of Microelectronics Devices and Integrated Tech., Inst. of Microelectronics, Chinese Academy of Sci. (China), 2. College of Integrated Circuits, Univ. of Chinese Academy of Sci. (China))

https://doi.org/10.7567/SSDM.2023.H-5-04

Metal/ferroelectric/metal capacitors with about 1 nm and 1.5 nm HfO2-ZrO2 alternate laminate layers are fabricated to investigate the laminate-thickness-dependent influence on the switching kinetics. Although the spontaneous polarization is found to slightly decrease in the nanolaminate structure, the characteristic switching time analyzed by the inhomogeneous field mechanism (IFM) is found to decrease with decreasing the laminate thickness. The activation field for the structure with thick laminate layers is observed to increase, indicating that the switching is harder to trigger. This work provides a guideline for designing ferroelectric devices in the future.