10:00 〜 10:15
[H-5-05] Performance Improvement of HfZrO x Ferroelectric Tunnel Junction with Amorphous Al 2O 3 Passivation Layer
In this paper, the influence of the amorphous Al2O3 passivation layer on the performance of HfZrOx (HZO) ferroelectric tunnel junctions (FTJs) was investigated. Compared with the FTJ without the Al2O3 passivation layer, the FTJ with Al2O3 passivation layer can effectively enhance the breakdown field strength, thus improving the Ps, memory window and tunneling electroresistance ratio (TER) (above 4400). In addition, the FTJ with the Al2O3 passivation layer exhibits more stable states in terms of retention characteristic and endurance performance. The study is helpful for understanding and optimizing the growth technics of HfO2-based FTJ in order to achieve the larger TER ratio and improve sensing margin.