14:45 〜 15:00
[H-7-05] Development of a 200 mm Wafer Silicon Nitride PIC Environment for Graphene Electro-Absorption Modulators
The demand for optical communication and data transfer is rapidly increasing, emphasizing the need for research on new materials and technology development in this field. This study describes the development of silicon nitride (SiN) grating couplers and waveguides on a 200mm wafer scale as a basis for the graphene-based optical modulators. The research presents results on the coupling efficiency and the influence of bottom and top cladding on the propagation loss of the light. This work is an important step for SOI free photonic-integrated-circuit (PIC) platforms and the development of high-speed, low-power and cost-effective communication applications.
