09:30 〜 09:45
[J-3-03] A 1.58nJ/Conversion Temperature-to-Digital Converter with Low Power Variations
A 1.58nJ/conversion temperature-to-digital converter at VDD = 0.7 V was designed and fabricated on the die area of 0.147mm2 using the 90 nm CMOS technology. The conversion time is 107 ms with the resolution of 0.052ºC and the FoM of 4.3 pJ×K2. The maximum inaccuracy is +1.2/-1.6ºC and the power variation is only 70% from -10ºC to 90ºC.
