The Japan Society of Applied Physics

2:45 PM - 3:00 PM

[K-1-03] Recovery of Cycling-Induced Degradation of Interfacial SiO 2 in HfO 2-FeFET and its Impact on Retention Characteristics

Viktoria Schlykow1, Kunifumi Suzuki1, Yoko Yoshimura1, Takamasa Hamai1, Kiwamu Sakuma1, Kazuhiro Matsuo1, Kota Takahashi1, Masamichi Suzuki1, Masumi Saitoh1, Reika Ichihara1 (1. KIOXIA Corporation (Japan))

https://doi.org/10.7567/SSDM.2023.K-1-03

A detailed understanding of cycling generated degradation of interfacial SiO2 in HfO2-FeFET devices is presented. By direct observation of electron trapping to cycling induced trap sites in various time domains, we found that trap sites disappear over time. This recovery of the degradation has a non-negligible impact on the retention characteristics after cycling.