4:45 PM - 5:00 PM
[K-2-04] Investigation of Spin-on Films as Mold Stack and Controlling Wafer Warpage for 3D Memory Integration
Spin-on materials for 3D memory stacks were investigated. Stacking up to 7µm of Spin-on Glass (SOG) and Spin-on Carbon (SOC) resulted in below 250µm of wafer warpage, whereas using only 2µm of SiO2/Si3N4 led to 250µm of warpage. Through TEM inspection, we confirmed that the thickness and interface between the SOG and SOC layers were not affected during stacking. To control wafer warpage, we propose an alternative method using the scribe line as the warpage control line (WCL). Warpage simulations support the reduction of warpage with possible dimensions of the WCL, up to 200µm in depth and 100µm in width.
