The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

10:00 AM - 10:15 AM

[K-3-03] Enhanced Device Performance of Monolayer WSe 2 pMOSFETs by Utilizing Bi 2Te 3 S/D Contacts

○Wenhsin CHANG1, Shogo HATAYAMA1, Yuta SAITO1, Naoya OKADA1, Takahiko ENDO2, Yasumitsu MIYATA2, Toshifumi IRISAWA1 (1. Natl. Inst. Adv. Indus. Sci. Tech. (Japan), 2. Tokyo Metropolitan Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.K-3-03

Novel tellurium (Te)-based contacts were found effective to improve the performance of transition metal dichalcogenides (TMDCs) MOSFETs, not only n but also pMOSFETs. We demonstrated enhanced device performance of monolayer (1L) WSe2 pMOSFETs with Bi2Te3 S/D contacts. Over 1000 times on-state current improvement is achieved, which can be attributed to the significant reduction of the Schottky barrier height by using a semi-metallic layered Bi2Te3 contact.