The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

12:00 PM - 12:15 PM

[K-4-04] A Thin TiN x Layer on Pt Electrode Based Hf 0.33Zr 0.66O 2 Ferroelectric Memory

○Asim Senapati1, Zhao- Feng Lou2, Fu- Sheng Chang2, Yu- Rui Chen2, Yi- Pin Chen1,3, Shih- Yin Huang3,4, Siddheswar Maikap1,3, Chee- Wee Liu2, Min- Hung Lee2 (1. Chang Gung Univ. (Taiwan), 2. National Taiwan Univ. (Taiwan), 3. Keelung Chang Gung Memorial Hospital (Taiwan), 4. Chang Gung University College of Medicine (Taiwan))

https://doi.org/10.7567/SSDM.2023.K-4-04

A thin TiNx interfacial layer (IL) at the Pt/Hf0.33Zr0.66O2 (HZO) interface enhances the 2Pr values (15.6 vs. 2.7 µC/cm2) at low ± 2.5 MV/cm as compared to w/o TiNx IL owing to higher o-phase fraction. The TiNx IL shows improved endurance (>109 cycles under ±4 MV/cm) and 10 years data retention owing to controlling amount of oxygen vacancy creation in HZO layer for future nanoscale non-volatile memory applications.