The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

2:00 PM - 2:15 PM

[K-7-02] Switching Characteristics of MgO Based MTJ with Intermediate State

○Yuya Miyazaki1, Chihiro Watanabe1, Junichi Tsuchimoto2, Hiroyuki Hosoya3, Yoshiteru Amemiya2, Akinobu Teramoto1,2 (1. Grad. Sch. of Adv. Sci. and Eng., Hiroshima Univ. (Japan), 2. Res. Inst. of Nanodevices, Hiroshima Univ. (Japan), 3. CANON ANELVA Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.K-7-02

Spin transfer torque magnetoresistive random access memory (STT-MRAM) uses the resistance change of magnetic tunnel junction (MTJ) to store digital information. In some MTJs, intermediate state (IM state) between two stable resistance states appears at switching. In this study, the switching characteristics of the MTJ with IM state were investigated. The MTJ with IM state requires higher voltage for switching than the MTJ without IM state. The 300 nm size MTJ has multiple IM states, and the number of states is almost proportional to the MTJ area. It is considered that the free layer has multiple domains with different probability of magnetization change.