The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

2:15 PM - 2:30 PM

[K-7-03] Twin-bit Via RRAM with Unique Diode State in Cross-bar Arraysby Advanced CMOS Cu BEOL Process

YU-CHENG - LIN1, Yao-Hung Huang1, ○Kai-Ching Chuang1, Yu-Der Chih2, Jonathan Chang2, Chrong-Jung Lin1, Ya-Chin King1 (1. Institute of Electronics Engineering, National Tsing Hua University (Taiwan), 2. Design Technology Platform (DTP), Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan (Taiwan))

https://doi.org/10.7567/SSDM.2023.K-7-03

A novel self-rectifying twin-bit Via-RRAM has been implemented in a cross-bar memory array using top via and metal layers in standard FinFET CMOS logic process in this study. The SiOx/TaOx based RRAMs with using copper back-end process with full logic compatibility. Its asymmetric IV in diode states also provides self-rectifying for sneak current suppression, making it advantageous for the integration of top-metal cross-bar arrays.