2:30 PM - 2:45 PM
[K-7-04] Synergetic FeRAM/OxRAM memory array operation induced by oxygen vacancy interface engineering in Si:HfO2 ferroelectric films
The introduction of a Ti oxygen scavenging layer
at the top interface of Si:HfO2-based BEOL-integrated
Metal/Ferroelectric/Metal capacitors enhances their
ferroelectric (FE) behavior (+100% remanent polarization
2.Pr), confirming the key role of oxygen vacancies (VO) in
orthorhombic phase crystallization at low thermal budgets. It
is statistically demonstrated at 16kbit array level that VO-rich
FE Si:HfO2 not only facilitates 2.5V FeRAM array operation
with improved memory window (MW) but also leads to
excellent FE OxRAM (which we call FOxRAM) array
properties with improved MW (x3) and Bit Error Rate (10-4)
at 100μA compliance current compared to the non-FE
reference counterparts.
at the top interface of Si:HfO2-based BEOL-integrated
Metal/Ferroelectric/Metal capacitors enhances their
ferroelectric (FE) behavior (+100% remanent polarization
2.Pr), confirming the key role of oxygen vacancies (VO) in
orthorhombic phase crystallization at low thermal budgets. It
is statistically demonstrated at 16kbit array level that VO-rich
FE Si:HfO2 not only facilitates 2.5V FeRAM array operation
with improved memory window (MW) but also leads to
excellent FE OxRAM (which we call FOxRAM) array
properties with improved MW (x3) and Bit Error Rate (10-4)
at 100μA compliance current compared to the non-FE
reference counterparts.