2:30 PM - 3:00 PM
[M-1-02 (Invited)] DLTS studies of Deep Level Defects in GaN
DLTS using bias pulses and MCTS using above-bandgap light pulses were used to study deep level defects in GaN grown by MOVPE. The hole trap H1 (Ev + ~0. 88 eV) and the electron trap E3 (Ec – ~0. 59 eV) were found to be dominant among traps observed by DLTS and MCTS for Schottky and pn diodes. The prominent result is that H1 and E3 are identified as CN and FeGa, respectively. This successful identification is expected to lead to the control of these deep level defects and the achievement of the high performance of GaN-based devices.