The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

3:00 PM - 3:15 PM

[M-1-03] Theoretical Study of Nitrogen Incorporation at the Steps on SiC(0001) Surface during CVD Growth

○Souichiro - Yamauchi1, Ichiro - Mizushima2, Takashi - Yoda2,3, Atushi - Oshiyama4, Kenji - Shiraishi4,1 (1. Graduate School of Engineering, Univ. of Nagoya (Japan), 2. NuFlare Technology Inc. (Japan), 3. FIRST of Tokyo Tech. (Japan), 4. IMaSS, Univ. of Nagoya (Japan))

https://doi.org/10.7567/SSDM.2023.M-1-03

For the CVD growth of SiC epitaxial growth, SiH4, C3H8, HCl, H2, and also N2 as n-type dopant are widely used as gas sources. Therefore, it is important to understand the mechanism of N-atom dopant incorporation on the SiC surface to realize a wide range of dopant concentration control. In this study, we investigated the N2-adsorption and incorporation at the steps on 4H-SiC(0001) surface, which is inclined toward [112‾0].