The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

4:30 PM - 4:45 PM

[M-2-02] Growth of High-Performance Single-Crystalline MoS 2 on Sapphire Substrates Using an Industrial Reactor for Next-Generation Electronics

○Henry Medina Silva1, Yuanyuan Shi1,2, Benjamin Groven1, Sreetama Banerjee1, Ankit Nalin Mehta1, Iryna Kandybka1, Akane Inoue1, Joris Verdin1, Pawan Kumar1, Quentin Smets1, Souvik Ghosh1, Daire Cott1, Stefanie Sergeant1, Dries Vranckx1, Sebastiaan Nijs1, Rudy Verheyen1, Tom Schram1, Marco Claudio Torres Macario1, Raf Rennen1, Felix De Groef1, Steven Brems1, Pierre Morin1, Cesar Javier Lockhart de la Rosa1, Inge Asselberghs1, Gouri Sankar Kar1 (1. IMEC (Belgium), 2. Univ. of Sci. and Tech. of China (China))

https://doi.org/10.7567/SSDM.2023.M-2-02

Using an industrial CVD reactor, we demonstrated improved epitaxial growth of MoS2 on sapphire substrates. Sapphire template design and correct tuning of the growth parameters prove essential for the epitaxial growth of MoS2 monolayers with a single preferential orientation and reduced grain boundaries. Mobilities up to 52cm2/Vs on monolayer MoS2 were measured. Moreover, 300mm FAB integration using transferred MoS2 monolayers paves the way for integrating high-performance MoS2 into CMOS technology for advanced channel and interconnect applications.