Influence of strain on multilayer Ge nanodots (ND) formation and vertical and lateral alignment are investigated by fabricating SiGe/Ge ND superlattice on 60-40% SiGe virtual substrate (VS). By reducing Ge content in the VS, smaller Ge NDs are formed and reduced Ge thickness is required to avoid irregular dot formation. Especially on the 40% SiGe VS, higher SiGe spacer growth temperature of 600 °C (from 550 °C) is needed to form smooth surface by compensating reduced surface migration, realizing vertical and lateral periodic Ge NDs. Feasibility of Ge ND size and periodicity control is demonstrated by strain engineering.