10:00 AM - 10:15 AM
[M-3-04] Formation of One-Dimensionally Self-Aligned Si-QDs and Their Local Electron Charging Properties
Self-aligned Si quantum dots (Si-QDs) have been successfully fabricated on ultrathin SiO2 by using a poly-Si on insulator (SOI) substrate, and controlling low-pressure chemical vapor deposition (LPCVD) using pure SiH4, and followed by thermal oxidation. Energy dispersive X-ray spectroscopy (EDX) mapping measurements confirm the thermal oxidation the Si-QDs and the poly-Si layer. Holes were stably stored in surface potential after electron extraction from the dots to the tip.
