The Japan Society of Applied Physics

10:00 AM - 10:15 AM

[M-3-04] Formation of One-Dimensionally Self-Aligned Si-QDs and Their Local Electron Charging Properties

Yuki Imai1, Katsunori Makihara1, Yuji Yamamoto2, Wei-Chen Wen2, Markus Andreas Schubert2, Johgeun Baek1, Ryoya Tsuji1, Noriyuki Taoka3, Akio Ohta4, Seiichi Miyazaki1 (1. Nagoya Univ. (Japan), 2. IHP (Germany), 3. Aichi Inst. of Tech. (Japan), 4. Fukuoka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.M-3-04

Self-aligned Si quantum dots (Si-QDs) have been successfully fabricated on ultrathin SiO2 by using a poly-Si on insulator (SOI) substrate, and controlling low-pressure chemical vapor deposition (LPCVD) using pure SiH4, and followed by thermal oxidation. Energy dispersive X-ray spectroscopy (EDX) mapping measurements confirm the thermal oxidation the Si-QDs and the poly-Si layer. Holes were stably stored in surface potential after electron extraction from the dots to the tip.