11:15 AM - 11:30 AM
[M-4-03] Seed-layer driven solid phase epitaxy of amorphous Ge 1− xSn x layers on Si(001) substrates toward in-plane strain control
A solid phase epitaxy (SPE) study of amorphous Ge1−xSnx layers (x=0 and 0.03) on Si (001) has been conducted to discuss the individual controllability of the Sn content and the strain. We found the Ge1−xSnx seed layer was required for the epitaxial growth while suppressing random bulk nucleation. Additionally, the tensile strain corresponding to the thermal expansion with the substrate tended to increase as the annealing temperature was increased, and ~0.1% smaller value was obtained for the Ge1−xSnx than Ge comparing the same annealing condition. This opens up the possibility of controlling the Sn content and the strain by tuning the thermal expansion coefficient.