11:30 AM - 11:45 AM
[M-4-04] Various Metal Contacts on Polycrystalline Ge with Amorphous Interlayer Formed by ZrN Sputter-Deposition
Sputter-deposition of ZrN onto polycrystalline (poly-) Ge allows alleviating Fermi-level pinning thanks to an amorphous interlayer (a-IL) containing nitrogen. This study evaluates the ZrN/poly-Ge interface and the electrical properties of various metal/a-IL/poly-Ge Schottky diodes. We demonstrate controlling Schottky barrier height reflecting metal work function.
