The Japan Society of Applied Physics

11:30 AM - 11:45 AM

[M-4-04] Various Metal Contacts on Polycrystalline Ge with Amorphous Interlayer Formed by ZrN Sputter-Deposition

Kenta Moto1, Kaoru Toko2, Tomonari Takayama1, Takamitsu Ishiyama2, Keisuke Yamamoto1 (1. Kyushu Univ. (Japan), 2. Univ. of Tsukuba (Japan))

https://doi.org/10.7567/SSDM.2023.M-4-04

Sputter-deposition of ZrN onto polycrystalline (poly-) Ge allows alleviating Fermi-level pinning thanks to an amorphous interlayer (a-IL) containing nitrogen. This study evaluates the ZrN/poly-Ge interface and the electrical properties of various metal/a-IL/poly-Ge Schottky diodes. We demonstrate controlling Schottky barrier height reflecting metal work function.