The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

11:30 AM - 11:45 AM

[M-6-04] Investigation of precipitation conditions of perovskite crystals into widegap semiconductor nanotrench structures

○Tomoaki Momma1, Akihiko Kikuchi1,2,3 (1. Sophia Univ. (Japan), 2. Sophia Photonics Reserch Center (Japan), 3. Sophia Semiconductor Reserch Institute (Japan))

https://doi.org/10.7567/SSDM.2023.M-6-04

We have investigated precipitation conditions of MAPbBr3 perovskite crystal into GaN and Ga2O3 based nanotrench structures with high-uniformity and high filling rate. Using the optimized precipitation condition, we have successfully demonstrated a fabrication of in-plane Ga2O3/air distributed Bragg reflector (DBR) resonant cavity structure with MAPbBr3 perovskite active layer by selective precipitation of MAPbBr3 in the central nanotrench sandwiched by DBRs. This technique is expected to be applied to new visible range optical integrated devices.