Si Diffusion Control by Inserting SiO <sub>2</sub> Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase

Yunosuke Sano

doi:https://doi.org/10.7567/SSDM.2023.M-7-03

2:00 PM - 2:15 PM

[M-7-03] Si Diffusion Control by Inserting SiO ₂ Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase

^○Yunosuke Sano¹, Wataru Yasuda¹, Noriyuki Taoka², Akio Ohta³, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Aichi Inst. of Tech. (Japan), 3. Fukuoka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.M-7-03

Relationships among chemical bonding features, amount of Si dopant, crystalline phases, and oxidation temperature of metal Hf layers on a Si substrate have been investigated changing thickness of an interfacial SiO₂ layer. We found that there is a suitable temperature window to control the amount of Si atoms in the Hf-oxide layer.

2023 International Conference on Solid State Devices and Materials

[M-7-03] Si Diffusion Control by Inserting SiO 2 Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase

[M-7-03] Si Diffusion Control by Inserting SiO ₂ Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase