The Japan Society of Applied Physics

2:15 PM - 2:30 PM

[M-7-04] Enhancement of the Polarization Properties in Thin Ferroelectric Hf 0.5Zr 0.5O 2 Films by Two-Step Flash Lamp Annealing

Hideaki Tanimura1, Yuto Ota2, Hikaru Kawarazaki1, Shinichi Kato1, Takumi Mikawa1, Yasuo Nara2 (1. SCREEN Semiconductor Solutions Co., Ltd. (Japan), 2. Univ. of Hyogo (Japan))

https://doi.org/10.7567/SSDM.2023.M-7-04

In this study we systematically studied the polariza-tion properties of thin ferroelectric Hf0.5Zr0.5O2 (HZO) films annealed using flash lamp annealing (FLA) with wide ranges of millisecond annealing times and annealing temperatures. We used a unique annealing method, two-step FLA, for which the highest observed remanent polar-ization for 5nm thick HZO was 24.2 μC/cm2.