Enhancement of the Polarization Properties in Thin Ferroelectric Hf 0.5Zr 0.5O 2 Films by Two-Step Flash Lamp Annealing

Hideaki Tanimura

doi:https://doi.org/10.7567/SSDM.2023.M-7-04

14:15 〜 14:30

[M-7-04] Enhancement of the Polarization Properties in Thin Ferroelectric Hf _0.5Zr _0.5O ₂ Films by Two-Step Flash Lamp Annealing

^○Hideaki Tanimura¹, Yuto Ota², Hikaru Kawarazaki¹, Shinichi Kato¹, Takumi Mikawa¹, Yasuo Nara² (1. SCREEN Semiconductor Solutions Co., Ltd. (Japan), 2. Univ. of Hyogo (Japan))

https://doi.org/10.7567/SSDM.2023.M-7-04

In this study we systematically studied the polariza-tion properties of thin ferroelectric Hf_0.5Zr_0.5O₂ (HZO) films annealed using flash lamp annealing (FLA) with wide ranges of millisecond annealing times and annealing temperatures. We used a unique annealing method, two-step FLA, for which the highest observed remanent polar-ization for 5nm thick HZO was 24.2 μC/cm².

2023 International Conference on Solid State Devices and Materials

[M-7-04] Enhancement of the Polarization Properties in Thin Ferroelectric Hf 0.5Zr 0.5O 2 Films by Two-Step Flash Lamp Annealing

[M-7-04] Enhancement of the Polarization Properties in Thin Ferroelectric Hf _0.5Zr _0.5O ₂ Films by Two-Step Flash Lamp Annealing