14:30 〜 14:45
[M-7-05] Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB 6 metal and LaB xN y insulator stacked structure
Fabrication process of floating-gate (FG) type non-volatile memory (NVM) device was investigated with the N-doped LaB6 metal and LaBxNy insulator stack structure. Sputtering gas pressure dependence for the LaBxNy insulator deposition was investigated on the tunnel layer (TL) and block layer (BL) at 0.47 Pa and 0.19 Pa, respectively. The quality of LaBxNy TL and BL was improved by the deposition at 0.19 Pa. The larger memory window (MW) of 0.48 V was obtained with smaller subthreshold swing (SS) of 70 mV/dec., lower density of interface state (Dit) of 6.6×1011 cm-2eV-1 and equivalent oxide thickness (EOT) of 3 nm under input pulse of 4.4 V/10 ms, compared to the deposition at 0.47 Pa.