The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

15:00 〜 15:15

[N-1-04] GaN Vertical p-n Junction Diode on GaN Substrate Grown by Na-Flux Method with Avalanche Capability and Demonstration of 100 A (pulsed) Operation

○Seiya Kawasaki1, Hirotaka Watanabe1, Kentaro Nonaka2, Tomohiko Sugiyama2, Yoshitaka Kuraoka2, Shugo Nitta1, Atsushi Tanaka1, Yoshio Honda1, Hiroshi Amano1 (1. Nagoya Univ. (Japan), 2. NGK Insulators, Ltd. (Japan))

https://doi.org/10.7567/SSDM.2023.N-1-04

We evaluated GaN vertical p-n junction diode (PND) on GaN substrate grown by Na-Flux method, and demonstrated high current operation. The Na-Flux-GaN substrates with the threading dislocation density of 0.5–5×106cm−2 and carrier concentration of 3–9×1018 cm−3 were prepared. The fabricated PNDs showed a clear avalanche breakdown at −800 V as designed, and a very low specific on-resistance of 0.17 mΩcm2. Large area GaN PNDs with anode diameter of 3 mm and breakdown voltage of −600 V were fabricated, and pulsed (100 μs) current reached 115 A (1.6 kA/cm2). The Na-Flux-GaN substrate showed great potential for high-voltage, high-current GaN vertical devices.