3:15 PM - 3:30 PM
[N-1-05] Impact of O 2 annealing on Chemical States of Mg doped GaN(0001) Surface
The effects of O2 annealing on surface morphologies, chemical bonding features, and filled electronic states of hetero-epitaxial GaN(0001) surface with Mg concentration of 2×1016 and 6×1018 cm-3 have been investigated from AFM, XPS, and PYS measurements. A sub nm-thick Ga oxide was formed on GaN surface with keeping surface morphologies by O2 annealing at temperature below 800 °C. From PYS analysis, O2 annealing at 600 °C was found to be effective to decrease the filled electronic states near the GaN surface in the energy region near the GaN bandgap.