16:45 〜 17:00
[N-2-03] Measurement of Heat Dissipation between SiC and Thermal Interface Material in Power Device Packaging Based on Optical-Interference Contactless Thermometry
Presence of interfacial thermal resistance (ITR) between semiconductor device and thermal interface material (TIM) significantly affects heat dissipation efficiency in power device packaging. In this work, we propose an experimental method to extract ITR at TIM/semiconductor interface using optical-interference contactless thermometry (OICT). Transient reflectivity variation of SU-8/SiC samples during Joule heating was measured and fitted by a two-dimensional heat conduction simulation and its optical analysis, in which the influence of ITR was considered in the boundary conditions at the interface. Based on the thermo-optic coefficient (TOC) of SU-8 and SiC, ITR and heat dissipation at the SU-8/SiC interface have been measured.