Analysis of Tunneling Effects in 4H-SiC Schottky Barrier Diodes Based on Complex Band Structure Considering Barrier Potential

Yutoku Murakami

doi:https://doi.org/10.7567/SSDM.2023.N-2-04

5:00 PM - 5:15 PM

[N-2-04] Analysis of Tunneling Effects in 4H-SiC Schottky Barrier Diodes Based on Complex Band Structure Considering Barrier Potential

^○Yutoku Murakami¹, Sachika Nagamizo¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.N-2-04

The tunneling probability in 4H-SiC Schottky barrier diodes (SBDs) is analyzed using the complex band structure of a system including the barrier potential of SBDs. The analysis demonstrates the possibility of obtaining more accurate tunneling current values by calculating the electronic states taking the barrier potential into account.

2023 International Conference on Solid State Devices and Materials

[N-2-04] Analysis of Tunneling Effects in 4H-SiC Schottky Barrier Diodes Based on Complex Band Structure Considering Barrier Potential