The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

11:15 〜 11:30

[N-4-03] Study on Stress in Trench Structures during Silicon IGBTs Process – Oxidation

○Bozhou Cai1, Jiuyang Yuan1, Yoshiji Miyamura1, Wataru Saito1, Shin-ichi Nishizawa1 (1. Univ. of Kyushu (Japan))

https://doi.org/10.7567/SSDM.2023.N-4-03

In this study, a three-dimensional model of a silicon chip with trench structures was developed to analyze the stress distribution induced by thermal process at the top of the trench, the scribe line, and the bottom surface of the wafer. The calculated stress is in good agreement with measurement by Raman spectroscopy. The trench top has much higher stress than the scribe line and the bottom surface. The stress depends on oxide thickness and the size scaling may reduce the stress.