Drain Leakage Current Control of Si Power MOSFETs with Fast Recovery Diodes

Hiroki Nemoto

doi:https://doi.org/10.7567/SSDM.2023.N-4-05

11:45 〜 12:00

[N-4-05] Drain Leakage Current Control of Si Power MOSFETs with Fast Recovery Diodes

^○Hiroki Nemoto¹, Tsuyoshi Kachi¹, Hiroaki Kato¹, Katsura Miyashita¹ (1. Toshiba Electronic Devices & Storage Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.N-4-05

An increase of drain leakage current, I_dss, is observed in Si power MOSFETs with fast recovery diodes utilizing platinum, Pt, diffusion. Based on TCAD simulation and Pt depth profile analysis, the I_dss increase is caused by the high electric field strength in the high Pt concentration region at the bottom of the trench contact. To reduce electric field strength there, we added low dose boron implant just under the base layer and confirmed that the I_dss is significantly reduced.

2023 International Conference on Solid State Devices and Materials

[N-4-05] Drain Leakage Current Control of Si Power MOSFETs with Fast Recovery Diodes