Low-temperature post-nitridation O <sub>2</sub> annealing to reduce the fixed charge density while maintaining the high SiC surface N density

Tianlin Yang

doi:https://doi.org/10.7567/SSDM.2023.N-5-01

09:00 〜 09:15

[N-5-01] Low-temperature post-nitridation O ₂ annealing to reduce the fixed charge density while maintaining the high SiC surface N density

^○Tianlin Yang¹, Takashi Onaya², Koji Kita^1,2 (1. Department of Materials Engineering, The Univ. of Tokyo (Japan), 2. Department of Advanced Materials Sci., The Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2023.N-5-01

We demonstrated a recovery of the negatively-shifted flatband voltage while maintaining the minimized interface defect density by the combination of high-temperature nitridation in N₂ and a low-temperature post-nitridation annealing (PNA) in O₂. The key to design such PNA process would be the choice of sufficient low-temperature for selective annihilation of O-deficiency in oxide while maintaining high SiC surface N density.

2023 International Conference on Solid State Devices and Materials

[N-5-01] Low-temperature post-nitridation O 2 annealing to reduce the fixed charge density while maintaining the high SiC surface N density

[N-5-01] Low-temperature post-nitridation O ₂ annealing to reduce the fixed charge density while maintaining the high SiC surface N density