Role of P(O <sub>2</sub>) in Annealing of the SiO <sub>2</sub>/SiC Stack Formed by Si Deposition plus Oxidation

Qian Zhang

doi:https://doi.org/10.7567/SSDM.2023.N-5-02

09:15 〜 09:30

[N-5-02] Role of P(O ₂) in Annealing of the SiO ₂/SiC Stack Formed by Si Deposition plus Oxidation

^○Qian Zhang^1,2, Nannan You¹, Jiayi Wang¹, Yang Xu¹, Yu Wang^1,2, Kuo Zhang^1,2, Shengkai Wang^1,2 (1. Inst. of Microelectronics of the Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China))

https://doi.org/10.7567/SSDM.2023.N-5-02

Annealing in N₂ at the temperature low than 1250^oC on the SiC MOS formed by oxidizing Si layers deposited on SiC has been demonstrated to be effective in reducing the D_it and N_bt of the samples. We have confirmed that the oxygen partial pressure is the main factor leading to the above improvement through the N₂/He annealing at 1200 ^oC and XPS measurement

2023 International Conference on Solid State Devices and Materials

[N-5-02] Role of P(O 2) in Annealing of the SiO 2/SiC Stack Formed by Si Deposition plus Oxidation

[N-5-02] Role of P(O ₂) in Annealing of the SiO ₂/SiC Stack Formed by Si Deposition plus Oxidation