The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

09:30 〜 09:45

[N-5-03] Anomalous Impact of Mechanical Uniaxial Stress on Threshold Voltage of 4H-SiC (0001) MOSFET

○Qiao Chu1, Masahiro Masunaga2, Akio Shima2, Koji Kita1 (1. The University of Tokyo (Japan), 2. Hitachi, Ltd. R&D Group (Japan))

https://doi.org/10.7567/SSDM.2023.N-5-03

We investigated the impact of mechanical uniaxial stress on threshold voltage of 4H-SiC (0001) n-MOSFET by bend. We found that threshold voltage changed significantly under the mechanical stress and recovered when the stress was removed. By comparing with flat-band voltage, we concluded that change in flat-band voltage is the main cause of change in threshold voltage under mechanical stress.